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URN: urn:nbn:de:bsz:25-opus-6135
URL: http://www.freidok.uni-freiburg.de/volltexte/613/

Salk, Natalie

Basics of detached Bridgman growth of Ge1-xSix crystals

Grundlagen des wandfreien Wachstums von Ge1-xSix Kristallen nach der Bridgman Methode

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Kurzfassung in Deutsch

Detached growth (or dewetting) refers to the fact that a small gap develops between growing crystal and container wall. Thus, the crystal grows wall-free, a small melt meniscus is formed between the growth interface and the ampoule. The contact-free growth reduces mechanical stress in the growing crystal resulting in a better crystal quality with less defect density.
High contact angles and high growth angles favor crystal detachment. Therefore, the knowledge of the contact angle is essential for choosing an appropriate ampoule material. Contact angles of Ge and Ge1-xSix (with Si concentrations up to 14 at-) were measured for a variety of potential crucible materials using the sessile drop technique. The surface tension of Ge and Ge1-xSix, as well as its temperature and concentration dependence, was determined simultaneously.
Growth experiments were performed in pBN (pyrolytic boron nitrite) and fused silica ampoules. The detached crystals were characterized with respect to their crystal quality (defect density) and impurity concentration.

SWD-Schlagwörter: Germanium , Bridgman-Verfahren , Kontaktwinkel , Oberflächenspannung
Freie Schlagwörter (deutsch): Germanium-Silizium , wandfreies Wachstum , Sessile Drop-Methode
Freie Schlagwörter (englisch): detached Bridgman , contact angle , surface tension , growth angle
PACS Klassifikation 81.10 , 61.72 , 68.03.C , 68.08.B
Institut: Kristallographisches Institut
Fakultät: Geowissenschaftliche Fakultät (bis Sept. 2002)
DDC-Sachgruppe: Geowissenschaften, Geologie
Dokumentart: Dissertation
Erstgutachter: Benz, Klaus W., Prof.
Sprache: Englisch
Tag der mündlichen Prüfung: 24.09.2002
Erstellungsjahr: 2002
Publikationsdatum: 13.01.2003